Title :
Fine pitch Cu wire bonding — As good as gold
Author :
Appelt, Bernd K. ; Chen, William T. ; Tseng, Andy ; Lai, Yi-Shao
Author_Institution :
ASE Group Inc., Santa Clara, CA, USA
Abstract :
Fine pitch gold wire bonding is the pre-eminent technology for die interconnection and has been advanced to very fine wire diameters. Copper wire bonding has been used for many years as well but was relegated to large wire diameters in automotive and power applications. The surge in gold commodity prices to more than 1,000 USD has fueled great interest in converting fine wire packaging from gold to copper. For course wire bonding, the challenges of harder and stiffer wire metallurgy, the propensity of oxidation and corrosion have been managed successfully. Fundamental studies had determined that intermetallic growth was an order of magnitude less than for gold and that the analysis for intermetallic coverage was considerably more difficult than in the case of gold. Additional challenges have arisen by the advancement of wafer nodes which have employed ever more brittle dielectrics and complex metal stack structures. Here, the development of high volume, fine pitch copper wire bonding will be described. Many of the coarse wire approaches can be adapted to fine pitch copper bonding with success. A rigorous evaluation and qualification methodology has been adopted to ensure highly efficient processes with yields equivalent to gold bonding and superior bonder machine efficiencies. At present devices of the 65 nm nodes are in production and 40/45 nm nodes are in qualification. Extended JEDEC type reliability testing has been performed to demonstrate the long term reliability of copper wire bonding.
Keywords :
fine-pitch technology; lead bonding; Cu; coarse wire; complex metal stack structure; course wire bonding; die interconnection; extended JEDEC type reliability testing; fine pitch copper wire bonding reliability; fine pitch gold wire bonding; fine wire packaging; gold bonding; gold commodity price; intermetallic coverage; intermetallic growth; size 65 nm; wafer node; wire metallurgy; Bonding; Compounds; Copper; Gold; Intermetallic; Reliability; Wire;
Conference_Titel :
CPMT Symposium Japan, 2010 IEEE
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-7593-3
DOI :
10.1109/CPMTSYMPJ.2010.5679677