Current status and emerging trends in RF power FET technologies

Author

Shenai, K. ; McShane, E.

Author_Institution

Microsyst. Res. Center, Illinois Univ., Chicago, IL, USA

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1501

Abstract

The growth in ISM and wireless communications markets, and the transition to 3G and embedded transceivers, are motivating an intense study of RFIC technologies. The power amplifier (PA) plays a critical role in the size, efficiency, and thermal requirements of wireless handsets. This paper reviews state-of-the-art and emerging power semiconductor devices for RF PAs. Comparisons are presented in terms of key specifications such as PAE, power gain, VSWR, package thermal resistance, and integrability.

Keywords

UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; field effect integrated circuits; power field effect transistors; reviews; thermal resistance; PAE; RF power FET technologies; RF power amplifiers; RFICs; VSWR; package thermal resistance; power added efficiency; power gain; power semiconductor devices; specifications; wireless handsets; FETs; Power amplifiers; Power semiconductor devices; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Telephone sets; Thermal resistance; Transceivers; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967187

Filename

967187