Title :
Current status and emerging trends in RF power FET technologies
Author :
Shenai, K. ; McShane, E.
Author_Institution :
Microsyst. Res. Center, Illinois Univ., Chicago, IL, USA
Abstract :
The growth in ISM and wireless communications markets, and the transition to 3G and embedded transceivers, are motivating an intense study of RFIC technologies. The power amplifier (PA) plays a critical role in the size, efficiency, and thermal requirements of wireless handsets. This paper reviews state-of-the-art and emerging power semiconductor devices for RF PAs. Comparisons are presented in terms of key specifications such as PAE, power gain, VSWR, package thermal resistance, and integrability.
Keywords :
UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; field effect integrated circuits; power field effect transistors; reviews; thermal resistance; PAE; RF power FET technologies; RF power amplifiers; RFICs; VSWR; package thermal resistance; power added efficiency; power gain; power semiconductor devices; specifications; wireless handsets; FETs; Power amplifiers; Power semiconductor devices; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Telephone sets; Thermal resistance; Transceivers; Wireless communication;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967187
