Studies of double-sided, double-metal silicon microstrip detectors

Author

Alexander, J.P. ; Bebek, C.J. ; Browder, T.E. ; Dobbins, J.A. ; Gray, S.G. ; Honscheid, K. ; Jones, C.D. ; Katayama, N. ; Katris, J.S. ; Kim, P.C. ; Selen, M. ; Worden, H.M. ; Wurthwein, F. ; Gronberg, J. ; Morrison, R.J. ; Hale, D.L. ; Korte, C. ; Kyre,

Author_Institution

Cornell Univ., NY, USA

fYear

1992

fDate

25-31 Oct 1992

Firstpage

224

Abstract

Double-sided, double-layer silicon microstrip detectors for the CLEO-II vertex detector have been studied. The double-layer structure permits the transverse strips to be connected via longitudinal readout traces to preamplifiers located at the end of the detectors. The detectors are full-size AC coupled detectors with polysilicon bias resistors on the n-side and punch-through biasing on the p-side. The authors present measurements of detector static properties, including the extra capacitance due to the double-layer structure, as well as measurements of signal and noise

Keywords

capacitance measurement; position sensitive particle detectors; semiconductor counters; semiconductor device noise; AC coupled detectors; CLEO-II vertex detector; Si microstrip detector; capacitance; double-metal; double-sided; noise; polysilicon bias resistors; punch-through biasing; signal; Capacitance measurement; Detectors; Impedance; Microstrip; Noise measurement; Preamplifiers; Resistors; Silicon; Strips; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301204

Filename

301204