Free ion yields for tetramethylsilane and tetramethylgermanium

Author

Sakamoto, M. ; Iso, H. ; Oyama, K. ; Higuchi, M. ; Hoshi, Y. ; Yuta, H. ; Abe, K. ; Hasegawa, K. ; Suekane, F. ; Kawamura, N. ; Neichi, K. ; Suzuki, K. ; Masuda, K. ; Kikuchi, R. ; Miyano, K.

Author_Institution

Dept. of Eng., Tohoku Gakuin Univ., Tagajo, Japan

fYear

1992

fDate

25-31 Oct 1992

Firstpage

251

Abstract

The free ion yields from ²⁰⁷Bi conversion electrons were measured as a function of applied electric field using ionization chambers filled with tetramethylsilane (TMS) and tetramethylgermanium (TMG). The distributions for thermalization lengths of electrons were calculated by using Gaussian and exponential forms. The total free ion yields considering the impurity effect in liquid, and the thermalization lengths of electrons in TMS and TMG were determined to be 3.35±0.49, 3.42±0.56 and 165±18 Å, 185±24 Å, respectively

Keywords

ionisation chambers; 165 Å; 3.35 Å; 3.42 Å; TMG; TMS; electron thermalization lengths; free ion yields; ionization chambers; tetramethylgermanium; tetramethylsilane; Dielectric constant; Educational institutions; Electric variables measurement; Electrons; Impurities; Ionization chambers; Physics; Probability; Spontaneous emission; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301214

Filename

301214