Title :
Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz
Author :
Kuhnert, H. ; Lenk, F. ; Hilsenbeck, J. ; Wurfl, J. ; Heinrich, W.
Author_Institution :
Ferdinard-Braun Inst., Berlin, Germany
Abstract :
Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies.
Keywords :
III-V semiconductors; MMIC oscillators; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit noise; phase noise; 18 GHz; 36 GHz; GaInP-GaAs; GaInP/GaAs HBT MMIC oscillator; monolithic coplanar oscillator; on-chip resonator; phase noise; Circuits; Electromagnetic measurements; Etching; Frequency; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MMICs; Oscillators; Phase measurement;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967198
