Low phase-noise PHEMT-based MMIC VCOs for LMDS applications

Author

Boudiaf, A. ; Ahdjoudj, M. ; Pouvil, P.

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1559

Abstract

This paper presents Pseudomorphic High Electron-Mobility Transistor based K-band voltage-controlled oscillators, which have exhibited low phase-noise properties in conjunction with output powers greater than previously reported. An appropriate nonlinear design methodology based on the optimization of transistor´s load cycles was applied. A tuning range over 14% bandwidth (22.4-25.8 GHz) for the first one, and 12% bandwidth (27.8-31.5 GHz) for the second one, were obtained. Constant output power of 6 dBm and 10 dBm respectively were measured over the tuning range. Markedly low phase noise level of -89 dBc/Hz at 100 kHz offset from the carrier (24.4 GHz), and -78 dBc/Hz at 100 kHz offset from the carrier (30 GHz) were achieved. To our knowledge, these are one of the best characteristics reported for K-band solid state VCOs.

Keywords

MMIC oscillators; circuit tuning; field effect MMIC; high electron mobility transistors; integrated circuit noise; phase noise; voltage-controlled oscillators; 22.4 to 25.8 GHz; 27.8 to 31.5 GHz; K-band; LMDS; PHEMT MMIC VCO; bandwidth; nonlinear design; output power; phase noise; solid-state oscillator; transistor load cycle optimization; tuning range; Bandwidth; Design methodology; Design optimization; K-band; MMICs; PHEMTs; Power generation; Power measurement; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967200

Filename

967200