Coplanar and microstrip oscillators in SiGe SIMMWIC technology

Author

Strohm, K.M. ; Rheinfelder, C.N. ; Luy, J.-F. ; Nuechter, P. ; Hess, T. ; Heinrich, W. ; Kuhnert, H. ; Nadarassin, M. ; Warns, C. ; Menzel, W.

Author_Institution

DaimlerChrysler Res. Center, Ulm, Germany

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1563

Abstract

Oscillators in SiGe SIMMWIC HBT technology have been realized in coplanar and a newly developed microstrip environment. Coplanar 24 GHz LC oscillators show 8.7 dBm output power and a phase noise of -99 dBc/Hz @ 100 kHz offset. Coplanar 27 GHz VCO´s yield 12.5 dBm output power and a tuning range of 1.28 GHz. Microstrip 27 GHz VCO´s show 5 dBm output power and a phase noise better than -90 dBc/Hz @ 100 kHz offset.

Keywords

Ge-Si alloys; bipolar MIMIC; heterojunction bipolar transistors; microstrip circuits; millimetre wave oscillators; semiconductor materials; voltage-controlled oscillators; 24 GHz; 27 GHz; LC oscillator; SiGe; SiGe SIMMWIC HBT technology; VCO; coplanar oscillator; microstrip oscillator; output power; phase noise; tuning range; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Microstrip; Millimeter wave technology; Phase noise; Power generation; Silicon germanium; Space technology; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967201

Filename

967201