Title :
Internal ECL-BiCMOS translator circuits in half micron technology
Author :
Boudon, Gerard ; Wallart, Frank ; Maillart, Eric
Author_Institution :
IBM France, Corbeil-Essonnes, France
Abstract :
BiCMOS associates high-speed circuits with the low power requirements of CMOS. Traditional BiCMOS circuits are mainly CMOS-based with bipolar buffers to improve driving capability and speed. Increased performance can be obtained with BiCMOS technology if CMOS/BiCMOS circuits are merged with an ECL (emitter-coupled logic) low swing circuit. Mixing of logic is possible if very-high-speed level translators for levels conversion are designed. The benefits of such an approach in 0.5-μm BiCMOS technology have been estimated for the proposed ECL-to-CMOS-level convertor circuits
Keywords :
BIMOS integrated circuits; buffer circuits; digital integrated circuits; emitter-coupled logic; integrated circuit technology; 0.5 micron; BiCMOS technology; CMOS-based; CMOS/BiCMOS circuits; ECL; ECL-BiCMOS translator circuits; ECL-to-CMOS-level convertor circuits; bipolar buffers; emitter-coupled logic; half micron technology; high-speed circuits; levels conversion; logic mixing; low power; very-high-speed level translators; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Clocks; Converters; Delay; Logic arrays; Registers; Voltage;
Conference_Titel :
Computer Design: VLSI in Computers and Processors, 1989. ICCD '89. Proceedings., 1989 IEEE International Conference on
Conference_Location :
Cambridge, MA
Print_ISBN :
0-8186-1971-6
DOI :
10.1109/ICCD.1989.63379
