Thin film deposition with intense ion beams

Summary form only given. Thin-film deposition by ion beam evaporation (IBE) is being studied at Los Alamos with an intense light ion beam generated with an applied-B/sub r/ magnetically insulated ion diode. For the first experiments, typical beam parameters are 0.4-MV, 35-kA, 0.5-/spl mu/s pulsewidth, H, C, and O ions generated with a Lucite flashover anode. Initial deposition experiments have been performed at relatively low energy fluences of about 10 J/cm/sup 2/ onto a variety of metallic and ceramic targets using a small portion of the beam. Beam-target interactions are modelled with the hydrodynamic code TITAN. YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta ceramic films, have been deposited onto a variety of room-temperature crystalline substrates. Rutherford backscattering analyses of the thin films indicate a deposition rate of 50 nm/pulse, which is orders of magnitude higher than typical laser deposition rates.