Title :
Characterisation of the Overlap Capacitance of Submicron LDD MOSFETs
Author :
Dyaev, V. Kol ; Clerix, A. ; Arteaga, R.Murphy ; Deferm, L.
Author_Institution :
Institute of Semiconductor Physics, Lavrent´´eva av. 13, Novosibirsk-90, 630090, Russia
Abstract :
The dependence of the gate capacitance Cgds on biasing voltages in currentless regime is discussed for nMOS and pMOS devices. The components of the overlap capacitance are extracted as well as the effective poly and channel length. The influence of processing conditions on the overlap capacitance is shown.
Keywords :
CMOS process; Capacitance measurement; Frequency; Geometry; MOS devices; MOSFET circuits; Physics; Semiconductor device modeling; Substrates; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
