Title :
Multiplication in SAGCM InP/InGaAs Avalanche Photodiodes
Author :
Ma, C.L.F. ; Deen, M.J. ; Tarof, L.E.
Author_Institution :
Engineering Science, Simon Fraser University, Burnaby, B. C., V5A 1S6, Canada
Abstract :
Planar separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs APDs are ideal for studying the multiplication (photogain) versus bias voltage (M-V) characteristics. In this paper, the M-V characteristics in SAGCM InP/InGaAs APDs are investigated both experimentally and theoretically. The self-calibrated nature of M and the bias-voltage independent quantum efficiency make it possible to compare theory and experiment accurately in an InP-based APD for the first time. Using a physics-based model, the M-V characteristics for all the SAGCM APDs with different device parameters are calculated theoretically, and the calculations are in good agreement to the experimental results.
Keywords :
Absorption; Avalanche photodiodes; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Optical fiber devices; Optical fibers; Photoconductivity; Quantum mechanics; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
