DocumentCode
1927972
Title
Performance of a 1.2 THz frequency tripler using a GaAs frameless membrane monolithic circuit
Author
Maestrini, A. ; Bruston, J. ; Pukala, D. ; Martin, S. ; Mehdi, I.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
3
fYear
2001
fDate
20-24 May 2001
Firstpage
1657
Abstract
The first ever planar Schottky diode multiplier working over a THz will be presented in this paper. A tunerless 1.2 THz waveguide frequency tripler has been designed, fabricated and tested. The frequency multiplier consists of a 3 micron-thick GaAs frameless-membrane monolithic circuit, mounted in a split waveguide-block, which includes a built-in Picket-Potter horn. The 1.2 THz membrane tripler is driven by a 400 GHz solid-state chain composed of HEMT based power amplifiers followed by two tunerless planar diode frequency doublers. At room temperature, output power up to 80 microwatts was measured at 1126 GHz with a peak-efficiency of 0.9% and a 3 dB bandwidth of about 3.5%. The output power of the multiplier chain increased dramatically with a decrease of the ambient temperature-up to 195 microwatts was measured at 120 K. When further cooled to 50 K the chain delivers power levels as high as 250 microwatts. To the best of our knowledge, this is the first demonstration of a fully planar multiplier chain at these frequencies, along with performance that supercedes current state-of-the-art performance of whisker-contacted sources.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; Schottky diodes; frequency multipliers; gallium arsenide; submillimetre wave integrated circuits; 0.9 percent; 1.2 THz; 3 micron; 400 GHz; 50 to 120 K; 80 to 250 muW; GaAs; HEMT based power amplifiers; ambient temperature; built-in Picket-Potter horn; frameless membrane monolithic circuit; output power; planar Schottky diode multiplier; solid-state chain; split waveguide-block; tunerless planar diode frequency doublers; waveguide frequency tripler; Biomembranes; Circuit testing; Frequency; Gallium arsenide; Power amplifiers; Power generation; Power measurement; Schottky diodes; Solid state circuits; Tuners;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.967223
Filename
967223
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