Title :
Silicon-organic hybrid (SOH) IQ modulator for 16QAM at 112 Gbit/s
Author :
Korn, D. ; Palmer, R. ; Yu, Haoyong ; Schindler, Philipp C. ; Alloatti, L. ; Baier, M. ; Schmogrow, R. ; Bogaerts, W. ; Selvaraja, Shankar ; Lepage, G. ; Pantouvaki, M. ; Wouters, Jan ; Verheyen, P. ; Van Campenhout, J. ; Absil, P. ; Baets, Roel ; Dinu, R
Author_Institution :
Inst. of Photonics & Quantum Electron., Karlsruhe Inst. of Technol., Karlsruhe, Germany
Abstract :
Silicon modulators fabricated by scalable, established CMOS technology, promise an answer to today´s power consumption challenges. With advanced modulation formats and the resulting higher spectral efficiencies, long-haul applications for silicon modulators come into reach. Energy efficient, high speed modulators were demonstrated as resonant [1] and non-resonant [2] devices. A single-carrier single-polarization data rate of 56 Gbit/s is considered state-of-the-art [3]. Usually, free-carrier dispersion is exploited in silicon modulators.
Keywords :
elemental semiconductors; optical fabrication; optical modulation; organic-inorganic hybrid materials; quadrature amplitude modulation; silicon; CMOS technology; QAM; Si; bit rate 112 Gbit/s; bit rate 56 Gbit/s; free-carrier dispersion; optical fabrication; optical modulation; power consumption; silicon-organic hybrid IQ modulator; single-carrier single-polarization data rate; Optical modulation; Optical waveguides; Phase shift keying; Photonics; Silicon;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
DOI :
10.1109/CLEOE-IQEC.2013.6801453
