DocumentCode :
1928315
Title :
Coupling between microstrip lines embedded in polyimide layers for 3D-MMICs on Si
Author :
Ponchak, G.E. ; Tentzeris, E.M. ; Papapolymerou, J.
Author_Institution :
NASA Glenn Res. Center, Cleveland, OH, USA
Volume :
3
fYear :
2001
fDate :
20-24 May 2001
Firstpage :
1723
Abstract :
Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si-SiGe monolithic microwave/millimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented.
Keywords :
MIMIC; MMIC; electromagnetic coupling; electromagnetic shielding; finite difference time-domain analysis; microstrip lines; polymer films; silicon; 3D monolithic ICs; CMOS Si wafers; FDTD analysis; Si; Si-SiGe; Si/SiGe MIMICs; Si/SiGe MMICs; circuit performance degradation; coupling reduction; embedded microstrip lines; low resistivity Si wafers; monolithic MM-wave ICs; monolithic microwave integrated circuits; multiple layers; polyimide layer embedded lines; shielding structures; three-dimensional circuits; transmission lines; Circuit optimization; Conductivity; Coupling circuits; Degradation; Distributed parameter circuits; Finite difference methods; Microstrip; Millimeter wave integrated circuits; Polyimides; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-6538-0
Type :
conf
DOI :
10.1109/MWSYM.2001.967238
Filename :
967238
Link To Document :
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