Accurate closed-form expressions for the frequency-dependent line parameters of on-chip interconnects on lossy silicon substrate

Author

Weisshaar, A. ; Hai Lan

Author_Institution

Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1753

Abstract

Accurate closed-form expressions for the frequency-dependent R,L,G,C line parameters of microstrip lines on lossy silicon substrate are presented. The closed-form expressions for the frequency-dependent series impedance parameters are obtained using a complex image method. The frequency-dependent shunt admittance parameters are expressed in closed form in terms of the shunt capacitances obtained in the low and high frequency limits. The proposed closed-form solutions are shown to be in good agreement with the electromagnetic solutions.

Keywords

capacitance; electric admittance; electric impedance; equivalent circuits; interconnections; microstrip lines; Si; accurate closed-form expressions; complex image method; eddy currents; electromagnetic solutions; equivalent circuit; frequency-dependent line parameters; high frequency limit; lossy silicon substrate; low frequency limit; microstrip lines; on-chip interconnects; series impedance parameters; shunt admittance parameters; shunt capacitances; Admittance; Closed-form solution; Conductivity; Eddy currents; Frequency; Impedance; LAN interconnection; Microstrip; Power transmission lines; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967245

Filename

967245