Title :
High Speed PIN Photodiodes for 10 - 20 Gbit/s High Sensitivity Photoreceivers
Author :
Blanconnier, P. ; Giraudet, L. ; Olivier-Martin, F. ; Praseuth, J.P. ; Legros, E.
Author_Institution :
France Telecom / CNET / Laboratoire de Bagneux, 196, Avenue Henri Ravera, BP 107, F-92225 Bagneux Cedex, FRANCE
Abstract :
This paper describes photodiodes developed for bit rates of 10 to 20 Gbit/s, obtained by compromising absorption thickness, capacitance and optical fibre coupling. Their fabrication is described, their characteristics are given, and illustrated by the realization of high speed high sensitivity photoreceivers at 10 and 20 Gbit/s.
Keywords :
Absorption; Bandwidth; Bit rate; Capacitance; Detectors; Diodes; Fabrication; Indium gallium arsenide; Optical films; PIN photodiodes;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
