An extrinsic-inductance independent approach for direct extraction of HBT intrinsic circuit parameters

Author

Horng, T.S. ; Wu, J.M. ; Huang, H.H.

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1761

Abstract

A new analytical procedure has been developed for direct extraction of the intrinsic elements in a hybrid-/spl pi/ equivalent circuit of heterojunction bipolar transistors (HBTs). The method differs from previous ones by formulating impedance-parameter based expressions that are exclusive of the extrinsic parasitic inductances associated with the base, emitter and collector. It is therefore not susceptible to variation of the extrinsic reactances from DC to high frequencies and can lead to very accurate extraction of the intrinsic elements under different bias conditions.

Keywords

equivalent circuits; heterojunction bipolar transistors; inductance; microwave bipolar transistors; network parameters; HBT intrinsic circuit parameters; bias conditions; direct extraction; extrinsic parasitic inductances; extrinsic-inductance independent approach; hybrid-/spl pi/ equivalent circuit; impedance-parameter based expressions; Current density; Current measurement; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Impedance; Integrated circuit interconnections; Power amplifiers; Scattering parameters; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967247

Filename

967247