Consistent small-signal and RF-noise parameter modelling of carbon doped InP/InGaAs HBT

Author

Agethen, M. ; Schuller, S. ; Velling, P. ; Brockerhoff, W. ; Tegude, F.-J.

Author_Institution

Dept. of Solid-State Electron., Gerhard-Mercator-Univ. Duisburg, Germany

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1765

Abstract

In this work a consistent small-signal and rf-noise parameter model of InP/InGaAs HBT is presented. This model is based on the typical three-mesa design of HBT and correlates intrinsic noise sources to specific device regions. Bias dependent investigation of S- and RF-noise parameters proves the consistency of the model.

Keywords

III-V semiconductors; S-parameters; UHF bipolar transistors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; semiconductor device noise; HBT; III-V semiconductors; InP-InGaAs:C; RF-noise parameter modelling; S-parameters; bias dependent investigation; device regions; intrinsic noise sources; small-signal parameter model; three-mesa design; Circuit noise; Equivalent circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Noise figure; Noise generators; Semiconductor device noise; Solid modeling; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967248

Filename

967248