Low noise, high radiation hardness front-end circuits based upon an upgraded JFET monolithic process

Author

Radeka, V. ; Rescia, S. ; Manfredi, P.F. ; Speziali, V. ; Svelto, F.

Author_Institution

Brookhaven Nat. Lab., Upton, NY, USA

fYear

1992

fDate

25-31 Oct 1992

Firstpage

421

Abstract

A second series of monolithic preamplifiers based on epitaxial channel JFETs (junction field effect transistors) and intended for calorimetry at hadron colliders has been realized. The employed buried layer process has been upgraded, resulting in a lower pinch-off voltage and a reduced power dissipation. The results obtained from the first two batches of the monolithic N-JFET preamplifier have demonstrated that the circuit has achieved very satisfactory performance in terms of noise, dynamic behavior and radiation hardness

Keywords

junction gate field effect transistors; nuclear electronics; preamplifiers; radiation hardening (electronics); semiconductor device noise; buried layer process; calorimetry; dynamic behavior; epitaxial channel JFETs; monolithic preamplifiers; noise; pinch-off voltage; power dissipation; radiation hardness; Calorimetry; Circuit noise; Current measurement; Impedance; JFET circuits; Laboratories; Packaging; Preamplifiers; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301279

Filename

301279