Title :
Low noise, high radiation hardness front-end circuits based upon an upgraded JFET monolithic process
Author :
Radeka, V. ; Rescia, S. ; Manfredi, P.F. ; Speziali, V. ; Svelto, F.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
Abstract :
A second series of monolithic preamplifiers based on epitaxial channel JFETs (junction field effect transistors) and intended for calorimetry at hadron colliders has been realized. The employed buried layer process has been upgraded, resulting in a lower pinch-off voltage and a reduced power dissipation. The results obtained from the first two batches of the monolithic N-JFET preamplifier have demonstrated that the circuit has achieved very satisfactory performance in terms of noise, dynamic behavior and radiation hardness
Keywords :
junction gate field effect transistors; nuclear electronics; preamplifiers; radiation hardening (electronics); semiconductor device noise; buried layer process; calorimetry; dynamic behavior; epitaxial channel JFETs; monolithic preamplifiers; noise; pinch-off voltage; power dissipation; radiation hardness; Calorimetry; Circuit noise; Current measurement; Impedance; JFET circuits; Laboratories; Packaging; Preamplifiers; Resistors; Voltage;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0884-0
DOI :
10.1109/NSSMIC.1992.301279