Title :
65-145 GHz InP MMIC HEMT medium power amplifiers
Author :
Samoska, L. ; Yoke Choy Leong
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
In this paper, we present two MMIC power amplifier designs utilizing InP HEMT technology. The first amplifier covers two full waveguide bands, WR10 (75-110 GHz) and WR8 (90-140 GHz), yielding a maximum output power of at least 25 mW between 65-140 GHz. The second design is optimized for the WR10 waveguide band and provides at least 13 dB of large signal gain over 75-110 GHz, and an output power of 40-50 mW.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; indium compounds; integrated circuit design; millimetre wave power amplifiers; 13 dB; 25 mW; 40 to 50 mW; 65 to 145 GHz; EHF; HEMT medium power amplifiers; InP; InP HEMT technology; InP MMIC HEMT; MIMIC power amplifier designs; MM-wave ICs; WR10 waveguide band; WR8 waveguide band; Frequency; HEMTs; Indium phosphide; MMICs; Power amplifiers; Power measurement; Probes; Scattering parameters; Semiconductor device measurement; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967257
