Title :
Comparison of Performance and Reliability Between Mosfets with Lpcvd Gate Oxide and Thermal Gate Oxide
Author :
Ahn, J. ; Ting, W. ; Kwong, D.L.
Author_Institution :
Department of Electrical and Computer Engineering, The University of Texas
Keywords :
Annealing; CMOS technology; Compressive stress; Dielectric substrates; Electric breakdown; Electron traps; Isolation technology; MOS capacitors; MOSFETs; Thermal stresses;
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
DOI :
10.1109/DRC.1991.664707
