Anti-series normally-On SiC JFETs operating as bidirectional switches

Author

Saadeh, M. ; Chinthavali, Madhu Sudhan ; Ozpineci, Burak ; Mantooth, Homer Alan

Author_Institution

Power Electron. & Electr. Machinery Res. Group, Oak Ridge Nat. Lab., Oak Ridge, TN, USA

fYear

2013

fDate

15-19 Sept. 2013

Firstpage

2892

Lastpage

2897

Abstract

Ac-ac matrix converters and cycloconverters require bi-directional switches, which are typically formed by two antiparallel thyristors or a two-switch (IGBT/MOSFETs) two-diode configuration. As silicon carbide (SiC) and gallium nitride (GaN) devices become more available, it is possible to have higher voltage FETs with low conduction and switching losses and reverse conduction capability, which allows the elimination of the diodes in a bidirectional switch. This paper will investigate a bidirectional switch formation that is formed by using two normally-on SiC JFETs in anti-series with no anti-parallel diodes.

Keywords

AC-AC power convertors; III-V semiconductors; cycloconvertors; field effect transistor switches; gallium compounds; junction gate field effect transistors; matrix convertors; power semiconductor switches; silicon compounds; wide band gap semiconductors; AC-AC matrix converters; IGBT; MOSFET; antiparallel thyristors; antiseries normally-on SiC JFET; bidirectional switch formation; cycloconverters; gallium nitride device; low conduction loss; reverse conduction capability; silicon carbide device; switching loss; two-diode configuration; Capacitance; JFETs; Logic gates; Schottky diodes; Silicon carbide; Switches; Voltage measurement; Anti-Series; Bidirectional; Cycloconverter; JFET; Matrix Converter; Normall-On; SiC;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2013 IEEE

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/ECCE.2013.6647077

Filename

6647077