Title :
Sensitive Far-Infrared Photodetector based on Pb1-xSnxTe(in)
Author :
Chesnokov, S.N. ; Dolzhenko, D.E. ; Ivanchik, I.I. ; Khokhlov, D.R.
Author_Institution :
Physics Department, Moscow State University, Moscow 119899, Russia
Abstract :
We present a new class of the far infrared photodetectors based on the lead-tin tellurides doped with the group III impurities. A range of features appearing in these semiconductors upon doping - Fermi level pinning, persistent photoconductivity and many others - provide very high parameters of the respective far-infrared photodetectors. The complex of features make the indium-doped lead-tin telluride-based photodetectors a promising candidate for detection of a weak far-infrared radiation at a low backgrounds.
Keywords :
Dielectric materials; Electrons; Indium; Lead compounds; Photoconductivity; Photodetectors; Semiconductor device doping; Semiconductor impurities; Semiconductor materials; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
