Title :
Microwave noise and power performance of metamorphic InP heterojunction bipolar transistors (HBTs)
Author :
Halder, S. ; Xiong, Y.Z. ; Ng, G.I. ; Wang, H. ; Zheng, H.Q. ; Radhakrishnan, K. ; Hwang, J.C.M.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Abstract :
For the first time, microwave noise and power performance of metamorphic InP HBTs (MM-HBTs) grown on GaAs substrates are reported. We find that microwave performance of MM-HBTs are comparable to that of lattice-matched InP HBTs (LM-HBTs) of identical design but fabricated on an InP substrate. The preliminary results imply that the superior performance of InP HBTs can be confidently exploited with the more mature manufacturing technology of GaAs.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device manufacture; semiconductor device noise; InP-GaAs; MM-HBTs; manufacturing technology; metamorphic heterojunction bipolar transistors; microwave noise performance; microwave power performance; Capacitance; Costs; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Manufacturing; Microwave devices; Microwave technology; Semiconductor device noise; Substrates;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967276
