Title :
Ka band power pHEMT technology for space power flip-chip assembly
Author :
Rogeaux, E. ; Fraysse, J.-P. ; Schaffauser, C. ; George, S. ; Pons, D. ; Fellon, P. ; Geiger, D. ; Theron, D. ; Haese, N. ; Verdeyme, S. ; Quere, R. ; Baillargeat, D. ; Ngoya, E. ; Long, S. ; Escotte, L.
Author_Institution :
Alcatel Space Ind., Toulouse, France
Abstract :
This paper proposes a released power pHEMT process for flip-chip mounting. The potential of this flip-chip process is demonstrated for power and low-noise applications in Ka-band.
Keywords :
HEMT integrated circuits; field effect MIMIC; flip-chip devices; integrated circuit noise; power integrated circuits; space vehicle electronics; Ka band; low-noise applications; power flip-chip assembly; power pHEMT technology; space vehicle electronics; Assembly; Electromagnetic modeling; MMICs; PHEMTs; Semiconductor device modeling; Space technology; Substrates; Temperature; Thermal management; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967278
