DocumentCode
1929471
Title
Comparative evaluation of SiC devices for PWM buck rectifier based active front end converter for MV grid interface
Author
Madhusoodhanan, S. ; Yonghwan Cho ; Kadavelugu, Arun ; Bhattacharya, Surya ; Grider, David ; Sei-Hyung Ryu ; Agarwal, Abhishek ; Leslie, Scott
Author_Institution
Dept. of ECE, North Carolina State Univ., Raleigh, NC, USA
fYear
2013
fDate
15-19 Sept. 2013
Firstpage
3034
Lastpage
3041
Abstract
In this paper a new method for implementation of a 3-phase medium voltage rectifier is presented for Active Front End grid interface applications. A current source based PWM buck rectifier with Silicon Carbide (SiC) devices, different from the traditional GTO based current source rectifier, is used to grid tie with 3-phase, 4.16 kV grid. The power level considered is 100 kVA. Simplicity of construction, very high efficiency, better input line current control and small volume are the main advantages of this system. Due to low switching losses compared with traditional GTOs, PWM operation of the rectifier at higher switching frequencies is possible. A detailed simulation shows the validity of the proposed method. Efficiency comparison of the PWM Buck rectifier with 10 kV/10 A SiC MOSFET and 15 kV/20 A SiC IGBT as the active devices is also presented. Low voltage hardware prototype based high frequency switching validation is also carried out.
Keywords
PWM power convertors; PWM rectifiers; electric current control; silicon compounds; 3-phase medium voltage rectifier; IGBT; MV grid interface; PWM buck rectifier; SiC; active front end converter; current 10 A; current 20 A; current control; silicon carbide devices; voltage 10 kV; voltage 15 kV; voltage 4.16 kV; Capacitors; Pulse width modulation; Rectifiers; Silicon carbide; Switches; Switching frequency; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/ECCE.2013.6647097
Filename
6647097
Link To Document