• DocumentCode
    1929536
  • Title

    Endurance of Mosfets with Rapid Thermally Deoxidized Nitrided Thin Gate Oxides to Hot Carrier Induced Gidl

  • Author

    Joshi, A.B. ; Kwong, D.L.

  • Author_Institution
    Department of Electrical and Computer Engineering, The University of Texas at Austin
  • fYear
    1991
  • fDate
    17-19 June 1991
  • Keywords
    Dielectric measurements; Electric resistance; Electron traps; Hot carriers; Interface states; MOSFETs; Microelectronics; Stress; Thermal degradation; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1991. 49th Annual
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-87942-647-0
  • Type

    conf

  • DOI
    10.1109/DRC.1991.664710
  • Filename
    664710
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1929536