Title :
Endurance of Mosfets with Rapid Thermally Deoxidized Nitrided Thin Gate Oxides to Hot Carrier Induced Gidl
Author :
Joshi, A.B. ; Kwong, D.L.
Author_Institution :
Department of Electrical and Computer Engineering, The University of Texas at Austin
Keywords :
Dielectric measurements; Electric resistance; Electron traps; Hot carriers; Interface states; MOSFETs; Microelectronics; Stress; Thermal degradation; Tunneling;
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
DOI :
10.1109/DRC.1991.664710
