Simple model for dynamic range estimate of GaAs amplifiers

Author

Nosal, Z.M.

Author_Institution

Inst. of Electron. Syst., Warsaw Univ. of Technol., Poland

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1963

Abstract

The method to estimate the dynamic range of low bias power low noise GaAs amplifiers for portable radio communication equipment is presented. The method uses the extension of a simple linear noise model of the microwave FET, major components of which are bias dependent. Both noise figure and intermodulation distortion of an amplifier may be predicted with this model and the dynamic range is easily calculated as a function of bias current and transistor width. The model unifies small signal and nonlinear properties in a form suitable for manual computation.

Keywords

HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; field effect MMIC; gallium arsenide; integrated circuit noise; intermodulation distortion; land mobile radio; GaAs; bias current; bias power; dynamic range estimate; intermodulation distortion; linear noise model; low noise amplifiers; manual computation; microwave FET; noise figure; nonlinear properties; portable radio communication equipment; small signal properties; transistor width; Dynamic range; Gallium arsenide; Intermodulation distortion; Low-noise amplifiers; Microwave FETs; Microwave devices; Microwave theory and techniques; Noise figure; Predictive models; Radio communication equipment;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967294

Filename

967294