• DocumentCode
    1929779
  • Title

    Thermal Re-Emission of Trapped Hot Electrons in NMOS Transistors

  • Author

    Or, S. S Burnette ; Forbes, Leonard ; Haddad, H.

  • Author_Institution
    Dept. of Elect. & Comp. Engr., Oregon State University
  • fYear
    1991
  • fDate
    17-19 June 1991
  • Keywords
    Electron devices; Electron traps; Hot carrier effects; Hot carriers; MOSFETs; Predictive models; Secondary generated hot electron injection; Thermal degradation; Thermal stresses; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1991. 49th Annual
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-87942-647-0
  • Type

    conf

  • DOI
    10.1109/DRC.1991.664711
  • Filename
    664711