DocumentCode :
1929779
Title :
Thermal Re-Emission of Trapped Hot Electrons in NMOS Transistors
Author :
Or, S. S Burnette ; Forbes, Leonard ; Haddad, H.
Author_Institution :
Dept. of Elect. & Comp. Engr., Oregon State University
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Electron devices; Electron traps; Hot carrier effects; Hot carriers; MOSFETs; Predictive models; Secondary generated hot electron injection; Thermal degradation; Thermal stresses; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664711
Filename :
664711
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1929779
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