Title :
Microwave noise and small-signal parameters scaling of InP/InGaAs DHBT with high DC current gain
Author :
Xiong, Y.Z. ; Ng, G.I. ; Wang, H. ; Law, C.L. ; Radhakrishnan, K. ; Fu, J.S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Abstract :
Scaling of microwave noise and small-signal parameters of InP-based Double Heterojunction Bipolar Transistors (DHBTs) with high DC current gain is presented. Three different sizes of InP/InGaAs DHBT are investigated in this work. Because of the low surface and intrinsic recombination of the InP-based DHBT with high current gain, the extrinsic parasitic effect of the device can be neglected. Thus, the microwave parameters of large size InP DHBT can be obtained by scaling the parameters of the smaller emitter size device. Good agreement was obtained between the measured and the calculated results. This scaling technique is very useful for the design of high frequency circuits using InP-based HBTs.
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device noise; surface recombination; DC current gain; InP-InGaAs; InP/InGaAs double heterojunction bipolar transistor; device scaling; high-frequency circuit design; intrinsic recombination; microwave noise; small-signal parameters; surface recombination; Bipolar transistors; Circuit noise; DH-HEMTs; Double heterojunction bipolar transistors; Frequency; Indium gallium arsenide; Indium phosphide; Microwave devices; Noise figure; Spontaneous emission;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967296