Title :
Electrical and Reliability Characteristics of Submicron Nmosfet´s with Oxynitride Gate Dielectric Prepared by Rapid Thermal Oxidation in N/sub 2/O
Author :
Hytmsang Hwang ; Wenchi Ting ; Dim-Lee Kwong ; Jack Lee
Author_Institution :
Microelectronics Research Center, The University of Texas at Austin
Keywords :
Degradation; Dielectrics; Electron devices; Hot carriers; Interface states; Leakage current; MOSFET circuits; Stress control; Transconductance;
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
DOI :
10.1109/DRC.1991.664712
