Analysis of lumped element transistor structures using MRTD: the equivalent source method

Author

Robertson, R.L. ; Katehi, L.P.B.

Author_Institution

Radiation Lab., Michigan Univ., Ann Arbor, MI, USA

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

2015

Abstract

The Multiresolution Time Domain (MRTD) method is applied to Maxwell´s equations and used to simulate lumped element transistor circuits. These lumped element circuits are expressed in terms of equivalent sources, or difference equations derived a priori to describe the behavior of the transistor. In this formulation, the transistor is modeled as a current source truncating the computation region. MRTD results are compared to those generated by LIBRA and good correlation is noted.

Keywords

Maxwell equations; difference equations; lumped parameter networks; microwave amplifiers; time-domain analysis; transistor circuits; Maxwell equations; difference equation; equivalent source method; lumped element transistor circuit; microwave amplifier; multiresolution time domain analysis; numerical simulation; Circuit simulation; Difference equations; Finite difference methods; Integrated circuit modeling; Intrusion detection; Microwave theory and techniques; Microwave transistors; Nonlinear equations; Time domain analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967306

Filename

967306