DocumentCode :
1930030
Title :
Analysis of lumped element transistor structures using MRTD: the equivalent source method
Author :
Robertson, R.L. ; Katehi, L.P.B.
Author_Institution :
Radiation Lab., Michigan Univ., Ann Arbor, MI, USA
Volume :
3
fYear :
2001
fDate :
20-24 May 2001
Firstpage :
2015
Abstract :
The Multiresolution Time Domain (MRTD) method is applied to Maxwell´s equations and used to simulate lumped element transistor circuits. These lumped element circuits are expressed in terms of equivalent sources, or difference equations derived a priori to describe the behavior of the transistor. In this formulation, the transistor is modeled as a current source truncating the computation region. MRTD results are compared to those generated by LIBRA and good correlation is noted.
Keywords :
Maxwell equations; difference equations; lumped parameter networks; microwave amplifiers; time-domain analysis; transistor circuits; Maxwell equations; difference equation; equivalent source method; lumped element transistor circuit; microwave amplifier; multiresolution time domain analysis; numerical simulation; Circuit simulation; Difference equations; Finite difference methods; Integrated circuit modeling; Intrusion detection; Microwave theory and techniques; Microwave transistors; Nonlinear equations; Time domain analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-6538-0
Type :
conf
DOI :
10.1109/MWSYM.2001.967306
Filename :
967306
Link To Document :
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