Title :
Modeling of VIPMOS Hot Electron Gate Currents
Author :
Hemink, G.J. ; Wijburg, R.C.M. ; Wolbert, P.B.M. ; Wallinga, H.
Author_Institution :
MESA Research Institute, University of Twente, Faculty of Electrical Engineering, P.O. Box 217, 7500 AE Enschede, The Netherlands.
Abstract :
A buried injector, which is biased by means of punch-through, can be used in substrate hot electron injection EEPROM devices [1]. In order to optimize this device an empirical expression for the injection probability as a function of the effective barrier height and the average electron energy is proposed and verified by measurements on a variety of devices.
Keywords :
Boltzmann equation; Distribution functions; Doping profiles; EPROM; Energy measurement; Microelectronics; Predictive models; Secondary generated hot electron injection; Semiconductor process modeling; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
