Title :
A comparative study of atomic layer deposited advanced high-k dielectrics
Author :
Duenas, S. ; Castán, H. ; García, H. ; Barbolla, J. ; Kukli, K. ; Aarik, J. ; Ritala, M. ; Leskelä, M.
Author_Institution :
Departamento de Electricidad y Electronica, Univ. de Valladolid, Spain
Abstract :
A comparative electrical characterization of metal-insulator-semiconductor (MIS) structures fabricated from atomic layer deposited (ALD) Al2O3, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films on silicon substrates has been carried out. The interface states as well as defects inside the insulator bulk were measured by using capacitance-voltage (C-V), deep level transient spectroscopy (DLTS) and conductance-transient (G-t) techniques. Interface quality is poorer in the case of Ta2O5 (Dit is about 6 × 1012 cm-2 eV-1) than in the Al2O3 ones (Dit values up to 1 × 1012 cm-2 eV-1). Also, the addition of Nb2O5 buffer layers to Ta2O5-based MIS degrades the structure (Dit reaches values of 1.2 × 1013 cm-2 eV-1).
Keywords :
MIS structures; aluminium compounds; atomic layer deposition; defect states; dielectric thin films; interface states; niobium compounds; silicon; tantalum compounds; Al2O3-Si; MIS structures; Nb2O5-Ta2O5-Nb2O5-Si; Ta2O5-Si; advanced high-k dielectrics; atomic layer deposition; defect states; dielectric thin films; electrical characterization; interface states; metal-insulator-semiconductor structures; silicon substrates; Atomic layer deposition; Capacitance-voltage characteristics; Dielectric substrates; Dielectric thin films; Dielectrics and electrical insulation; High-K gate dielectrics; Interface states; Metal-insulator structures; Niobium; Silicon;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504298
