Title :
Silicon etched-groove permeable base transistor fabrication with cutoff frequencies (fT, fmax) above 25 GHz
Author :
Gruhle, A. ; Badoz, P.A. ; Chevalier, F. ; Halimaoui, A. ; Lalanne, F. ; Mouis, M. ; Regolini, J.L. ; Vincent, Gregory ; Bensahel, D.
Author_Institution :
CNET-CNS, BP 98, F-38243 Meylan Cedex, France
Abstract :
We report the fabrication of etched-groove silicon permeable base transistors (PBTs) with mushroom-shaped 0.2-0.4 ¿m wide source fingers. This structure enables both the passivation of the Si finger sidewalls and the reinforcement of the platinum gate with a gold overlayer. The low base resistance and the optimized doping profile yielded devices with fT and fmax values up to 26 GHz.
Keywords :
Conductivity; Cutoff frequency; Etching; Fabrication; Fingers; Gold; Passivation; Polyimides; Silicon; Substrates;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
