DocumentCode
1930381
Title
Analysis of the degradation of high concentrator III-V solar cells
Author
González, José Ramón ; Baudrit, Mathieu ; Algora, Carlos ; Rey-Stolle, Ignacio
Author_Institution
Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
fYear
2005
fDate
2-4 Feb. 2005
Firstpage
33
Lastpage
36
Abstract
The implantation of high concentrator III-V solar cells to an industrial scale needs to perform many tests in order to prove their reliability. This task must be undertaken through three different sort of experiments: Accelerated degradation tests, real time degradation tests, and screening tests. An experimental strategy is suggested to achieve the implementation of these devices.
Keywords
III-V semiconductors; semiconductor device reliability; solar cells; III-V semiconductors; high concentrator III-V solar cells; semiconductor device reliability; solar cell degradation; Apertures; Costs; Degradation; Gallium arsenide; III-V semiconductor materials; Life estimation; Photovoltaic cells; Semiconductor device testing; Space technology; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2005 Spanish Conference on
Print_ISBN
0-7803-8810-0
Type
conf
DOI
10.1109/SCED.2005.1504299
Filename
1504299
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