Title :
Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
Author :
Duenas, S. ; Castan, H. ; García, H. ; Barbolla, J. ; San Andres, E. ; Martil, I. ; Gonzales-Diaz, G. ; Kukli, K. ; Aarik, J.
Author_Institution :
Departamento de Electricidad y Electronica, Univ. de Valladolid, Valadolid, Spain
Abstract :
A comparison between interface quality of several temperatures thermal annealed HPRS TiO2 films and 750 °C annealed ALD TiO2 films has been established. Our attention has been focused on the interfacial state and disordered induced gap state densities. From our results, HPRS films submitted to in situ 900 °C thermal annealing in oxygen atmosphere exhibit the best characteristics, with Dit density being the lowest value measured in this work (5.6 × 1011 cm-2 eV-1), and undetectable conductance transients within our experimental limits.
Keywords :
MIS structures; annealing; atomic layer deposition; dielectric thin films; interface states; sputtering; titanium compounds; 750 C; 900 C; HPRS films; MIS structures; TiO2-Si; atomic layer deposition; dielectric thin films; disordered induced gap state densities; high-pressure reactive sputtering; interface quality; interface states; interfacial state; thermal annealing; titanium oxide thin films; Annealing; Atmosphere; Atomic layer deposition; Conductive films; Semiconductor thin films; Silicon; Sputtering; Temperature; Thermal conductivity; Titanium;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504303
