• DocumentCode
    1930553
  • Title

    Leaky spots in irradiated SiO2 gate oxides observed with C-AFM

  • Author

    Porti, M. ; Nafría, M. ; Aymerich, X. ; Cester, A. ; Paccagnella, A. ; Cimino, S.

  • Author_Institution
    Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Bellaterra, Spain
  • fYear
    2005
  • fDate
    2-4 Feb. 2005
  • Firstpage
    53
  • Lastpage
    56
  • Abstract
    A conductive atomic force microscope (C-AFM) has been used to perform a nanometer scale characterization of the electrical properties of irradiated thin SiO2 gate oxides of MOS devices. The results have been compared to those obtained on fresh (without irradiation) and electrically stressed oxides. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Their I-V characteristics have been registered with the C-AFM. The results show that they have a leaky behaviour, which has been associated to the radiation induced leakage current (RILC).
  • Keywords
    MIS structures; atomic force microscopy; leakage currents; nanostructured materials; radiation effects; silicon compounds; C-AFM; SiO2; conductive atomic force microscope; electrical properties; irradiated thin gate oxides; irradiation induced electrical damage; leaky spots; nanometer scale characterization; radiation induced leakage current; Conductivity; Current measurement; Density measurement; Electric variables measurement; Microscopy; Stress measurement; Surface topography; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2005 Spanish Conference on
  • Print_ISBN
    0-7803-8810-0
  • Type

    conf

  • DOI
    10.1109/SCED.2005.1504304
  • Filename
    1504304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1930553