Title :
An Analytical Model for Hot-Carrier-Induced Degradation of Submicron N-MOSFET
Author :
Bouchakour, R. ; Hardy, Leor ; Jourdain, M.
Author_Institution :
Ecole Nationale Supérieure des Télécommunications, Département d´´Electronique, ura CNRS 820, 46 Rue Barrault, 75634 Paris cédex 13, France. Email: bouchakour@amon.enst.fr, tél: 33.1. 45.81.78.11, fax: 33.1.45.80.40.36
Abstract :
This paper presents a generalized version of the MOS charge-sheet model which physically incorporates nonuniform distribution of defects along the channel into the analysis. The model has been applied to study the effect of the localized hot-carrier degradation near the drain on the electrical behavior of a short channel nMOS transistor. A good fitting has been achieved between the experimental data and the simulation.
Keywords :
Analytical models; Circuit simulation; Circuit synthesis; Degradation; Electron traps; Hot carrier effects; Hot carriers; MOSFET circuits; Predictive models; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
