Title :
A study of the influence of N2O and N2 annealing processes on 4H-SiC MOS structures with deposited TEOS SiO2 as gate oxide
Author :
Pérez-Tomas, A. ; Godignon, P. ; Mestres, N. ; Tournier, D. ; Millán, J.
Author_Institution :
Centre Nacional de Microelectron., CSIC, Barcelona, Spain
Abstract :
4H-SiC MOS structures have been implemented using deposited SiO2-TEOS oxides as an innovative gate process fabrication. The effect of SiO2-TEOS post-deposition annealings has been analyzed. The main electrical properties have been extracted pointing out a considerable improvement on the electrical characteristics when the TEOS oxides were annealed at high temperatures. 4H-SiC MOSFETs have been fabricated using these oxides and the experimental results show an improvement of the effective channel mobility (up to 12cm2/Vs) with a significant reduction of the sub-threshold swing.
Keywords :
MIS structures; MOSFET; annealing; nitrogen compounds; silicon compounds; wide band gap semiconductors; 4H-SiC MOS structures; 4H-SiC MOSFET; N2O; SiC; SiO2; TEOS oxides; annealing processes; channel mobility; electrical characteristics; electrical properties; gate oxide; gate process fabrication; post-deposition annealing; CMOS technology; Conducting materials; Electric variables; Fabrication; MOSFETs; Oxidation; Plasma temperature; Rapid thermal annealing; Silicon carbide; Thermal conductivity;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504313
