Title :
Progress in High Frequency Heterojunction Field Effect Transistors
Author :
Eastman, Lester F.
Author_Institution :
School of Electrical Engineering and National Nanofabrication Facility, Cornell University, Phillips Hall, Ithaca, New York, 14853-5401
Abstract :
The concepts, technology and the present experimental limits of performance of heterojunction modulation doped field effect transistors are covered. Both lattice-matched and strained, pseudomorphic quantum well channels on GaAs substrates, as well as lattice-matched quantum well channels on InP substrates are included. Power gain frequency limits to 450 GHz, and noise figures as low as .8-.9 db at 60 GHz are presented for 300K operation of the latter devices.
Keywords :
Aluminum; Electron mobility; FETs; Frequency; Gallium arsenide; HEMTs; Heterojunctions; Indium phosphide; MODFETs; Sheet materials;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
