A silicon-on-insulator 28-V RF power LDMOSFET for 1-GHz integrated power amplifier applications

Author

McShane, E. ; Shenai, K. ; Leong, S.K.

Author_Institution

MicroSyst. Res. Center, Illinois Univ., Chicago, IL, USA

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

2135

Abstract

This paper presents the first results of a 1-GHz SOI RF power LDMOSFET with 115 mW of output power. A 6-W P/sub OUT/ (competitive with comparable bulk LDMOSTs) can be achieved by scaling the FET dimensions with little degradation of RF performance. Both DC and RF characteristics are presented, and model parameters are extracted. Class A amplifier results are shown to deliver a PAE of 25%, power gain of 16 dB, and 1-dB compression of 40 mW. These results are extremely encouraging for IPA development with SOI RF power LDMOSFETs.

Keywords

UHF field effect transistors; UHF power amplifiers; power MOSFET; silicon-on-insulator; 1 GHz; 115 mW; 16 dB; 25 percent; 28 V; DC characteristics; RF characteristics; SOI RF power LDMOSFET; Si; class A amplifier; compression; integrated power amplifier; model parameter extraction; output power; power gain; power-added efficiency; Dielectric substrates; Fabrication; Gallium arsenide; Germanium silicon alloys; Implants; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967336

Filename

967336