Comparative evaluation of high current SiC Schottky diodes and Si PN junction diodes

Author

Jordà, X. ; Tournier, D. ; Vellvehi, M. ; Pérez, A. ; Pérez, R. ; Godignon, P. ; Millán, J.

Author_Institution

Centre Nacional de Microelectron., Barcelona, Spain

fYear

2005

fDate

2-4 Feb. 2005

Firstpage

87

Lastpage

90

Abstract

SiC Schottky barrier diodes (SBD) are commercially available in the 600 V breakdown voltage range and 1.2 kV SiC SBDs have been announced. In this paper we compare the behavior of recently fabricated high-current 1.2 kV SBD with that of equivalent Si diodes, underlining the high temperature working operation capability (up to 200°C), Lower reverse leakage current is obtained using Ni instead of Ti (the most spread solution) for the Schottky contact. The temperature dependence of forward characteristics, reverse leakage current and switching recovery performances have been analyzed.

Keywords

Schottky barriers; Schottky diodes; elemental semiconductors; leakage currents; p-n junctions; silicon compounds; 1.2 kV; 600 V; PN junction diodes; Schottky barrier diodes; Schottky contact; SiC; high temperature working operation; reverse leakage current; switching recovery; Fabrication; Leakage current; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Substrates; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2005 Spanish Conference on

Print_ISBN

0-7803-8810-0

Type

conf

DOI

10.1109/SCED.2005.1504315

Filename

1504315