Title :
Unified model of the enhancement-mode MOS transistor
Author_Institution :
Technical University of Gda¿sk, Institute of Electronic Technology, Majakowskiego 11/12, PL 80-952 Gda¿sk, Poland
Abstract :
A new unified fully analytical dc model of the enhancement-mode uniformly doped MOS transistor resulting from a wide device-physics-oriented theoretical analysis. The model deals with the triode and saturation region of the transistor operation as a whole, and its validity is preserved for the long- and short-channel MOS transistors.
Keywords :
Analytical models; Dielectrics and electrical insulation; FETs; Lead; MOSFET circuits; Numerical analysis; Physics; Publishing; Scattering; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
