Multi-harmonic tuning behavior of MOSFET RF power amplifiers

Author

YuCai Zhang ; Salama, C.A.T.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

2147

Abstract

This paper categorizes, for the first time, multi-harmonic tuning behavior into four basic modes: both odd/even harmonics SHORT (SS), odd harmonics SHORT and even harmonics OPEN (SO), odd harmonics OPEN and even harmonics SHORT (OS), and both odd/even harmonics OPEN (OO). Conventional power amplifiers (class AB, E, F, etc.) can be characterized using these modes of operation in so far as multi-harmonic tuning is concerned and a systematic simulation procedure can be used to find the optimal harmonic terminations. A simulation and experimental study of the multi-harmonic tuning behavior of MOSFET RF power amplifiers reveals that the odd/even harmonics OPEN (OO) mode results in the highest efficiency for such devices.

Keywords

MOSFET circuits; UHF power amplifiers; circuit simulation; circuit tuning; harmonics; power MOSFET; MOSFET RF power amplifiers; device efficiency; even harmonics; multi-harmonic tuning behavior; odd harmonics; odd/even harmonics open mode; optimal harmonic terminations; simulation procedure; Circuit simulation; High power amplifiers; MOSFET circuits; Power MOSFET; Power amplifiers; Power system harmonics; Radio frequency; Radiofrequency amplifiers; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967339

Filename

967339