DocumentCode
1930901
Title
Study of self-heating effects in GaN HEMTs
Author
Nuttinck, S. ; Gebara, E. ; Laskar, J. ; Harris, M.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
3
fYear
2001
fDate
20-24 May 2001
Firstpage
2151
Abstract
Pulsed RF and I-V characterizations are performed on power GaN HEMTs. These measurements are carried out at different temperatures for the first time to understand self-heating effects and to investigate the possibility of improving heat dissipation mechanisms. These measurements are the basis for robust large-signal models.
Keywords
III-V semiconductors; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device measurement; thermal analysis; wide band gap semiconductors; GaN; GaN power HEMTs; heat dissipation mechanisms; pulsed I-V characterization; pulsed RF characterization; robust large-signal models; self-heating effects; Gallium nitride; HEMTs; MODFETs; Phased arrays; Power generation; Power transistors; Radio frequency; Robustness; Silicon carbide; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.967340
Filename
967340
Link To Document