An analytical model for the S-parameters of optically controlled GaAs MESFET´s

Author

Murty, Neti V L Narasimha ; Jit, S.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

fYear

2005

fDate

2-4 Feb. 2005

Firstpage

103

Lastpage

106

Abstract

A new analytical model for the microwave characteristics of optically controlled GaAs MESFET (OPFET) in terms of S-parameters is presented in this paper. The novelty of this model lies in the calculation of photo induced gate voltage. Using that photo voltage, we have analyzed the photo effects on intrinsic parameters of MESFET. To make this characterization effective and accurate, we have included the Gunn domain capacitance, domain resistance, transit time effect, low frequency anomalies and parasitic elements in the equivalent circuit of MESFET. We have compared our results in both dark and illuminated conditions with the reported one to show the validity of the model.

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; semiconductor device models; GaAs; Gunn domain capacitance; OPFET; S-parameters; domain resistance; equivalent circuit; microwave characteristics; optically controlled MESFET; photo effects; photo induced gate voltage; transit time effect; Analytical models; Equivalent circuits; Frequency; Gallium arsenide; Gunn devices; MESFETs; Optical control; Parasitic capacitance; Scattering parameters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2005 Spanish Conference on

Print_ISBN

0-7803-8810-0

Type

conf

DOI

10.1109/SCED.2005.1504320

Filename

1504320