DocumentCode
1930922
Title
InGaP PHEMTs for wireless power applications
Author
Lan, E. ; Pitts, B. ; Mikhov, M. ; Hartin, O.
Author_Institution
Digital DNA Labs., Motorola Inc., Tempe, AZ, USA
Volume
3
fYear
2001
fDate
20-24 May 2001
Firstpage
2155
Abstract
This paper shows that we have successfully fabricated a InGaP PHEMT device with a tight threshold voltage distribution of 22 mV by using InGaP as barrier layer material. Fabricated device performance is similar to our standard AlGaAs PHEMT for low voltage operation. A 15 mm device delivers 30 dBm output power, 10.2 dB associated gain, and 67% power added efficiency at 1 dB compression point while operated at 3.5 V and 1.9 GHz.
Keywords
III-V semiconductors; UHF field effect transistors; gallium compounds; indium compounds; power HEMT; voltage distribution; 1.9 GHz; 10.2 dB; 15 mm; 3.5 V; 67 percent; InGaP; InGaP PHEMTs; InGaP barrier layer material; device performance; pseudomorphic HEMT; threshold voltage distribution; wireless power applications; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; Lattices; PHEMTs; Radio frequency; Semiconductor device noise; Substrates; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.967341
Filename
967341
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