Title :
InGaP PHEMTs for wireless power applications
Author :
Lan, E. ; Pitts, B. ; Mikhov, M. ; Hartin, O.
Author_Institution :
Digital DNA Labs., Motorola Inc., Tempe, AZ, USA
Abstract :
This paper shows that we have successfully fabricated a InGaP PHEMT device with a tight threshold voltage distribution of 22 mV by using InGaP as barrier layer material. Fabricated device performance is similar to our standard AlGaAs PHEMT for low voltage operation. A 15 mm device delivers 30 dBm output power, 10.2 dB associated gain, and 67% power added efficiency at 1 dB compression point while operated at 3.5 V and 1.9 GHz.
Keywords :
III-V semiconductors; UHF field effect transistors; gallium compounds; indium compounds; power HEMT; voltage distribution; 1.9 GHz; 10.2 dB; 15 mm; 3.5 V; 67 percent; InGaP; InGaP PHEMTs; InGaP barrier layer material; device performance; pseudomorphic HEMT; threshold voltage distribution; wireless power applications; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; Lattices; PHEMTs; Radio frequency; Semiconductor device noise; Substrates; Threshold voltage;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967341
