DocumentCode
1930929
Title
Analytical models for PN cross varactors
Author
Pérez, J.A. ; González, B. ; García, J. ; Pino, J. Del ; Khemchandani, S.L. ; Hernández, A.
Author_Institution
Inst. Univ. de Microelectron. Aplicada, Univ. de Las Palmas de Gran Canaria, Spain
fYear
2005
fDate
2-4 Feb. 2005
Firstpage
107
Lastpage
110
Abstract
In this paper, models for the capacitance of cross integrated varactors based in the PN junction are presented. Three different approximations are assumed, in order to reproduce the measured results of the capacitance. The relative error with the measured capacitance is under 10% in all cases.
Keywords
capacitance measurement; p-n junctions; semiconductor device models; varactors; PN junction; capacitance measurement; cross integrated varactors; Analytical models; Capacitance measurement; Cathodes; Geometry; Integrated circuit measurements; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Varactors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2005 Spanish Conference on
Print_ISBN
0-7803-8810-0
Type
conf
DOI
10.1109/SCED.2005.1504321
Filename
1504321
Link To Document