Title :
Current performance of high speed transistors
Author :
Viñas, Lluís Prat ; Llorens, D.B.
Author_Institution :
Departament d´´Enginyeria Electronica, Univ. Politecnica de Catalunya, Spain
Abstract :
This work presents a comparison of high speed performance parameters between the main devices used nowadays in high speed demanding applications: SiGe HBT, InP HBT and InP HEMT. First of all, a description of the material properties and the structure characteristics is presented. Secondly, the merit figures that define the performance in this application field are discussed, and then the evolution of the transition frequency in the last twenty years is shown.
Keywords :
Ge-Si alloys; III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; InP; SiGe; heterojunction bipolar transistors; high electron mobility transistors; high speed performance parameters; high speed transistors; material properties; structure characteristics; transition frequency; Electron mobility; Frequency; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MESFETs; MODFETs; Silicon germanium;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504322
